JPH038582B2 - - Google Patents

Info

Publication number
JPH038582B2
JPH038582B2 JP57001706A JP170682A JPH038582B2 JP H038582 B2 JPH038582 B2 JP H038582B2 JP 57001706 A JP57001706 A JP 57001706A JP 170682 A JP170682 A JP 170682A JP H038582 B2 JPH038582 B2 JP H038582B2
Authority
JP
Japan
Prior art keywords
layer
polycrystalline silicon
conductivity type
region
mask layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57001706A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58119668A (ja
Inventor
Akira Kawakatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57001706A priority Critical patent/JPS58119668A/ja
Publication of JPS58119668A publication Critical patent/JPS58119668A/ja
Publication of JPH038582B2 publication Critical patent/JPH038582B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP57001706A 1982-01-11 1982-01-11 半導体集積回路装置の製造方法 Granted JPS58119668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57001706A JPS58119668A (ja) 1982-01-11 1982-01-11 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57001706A JPS58119668A (ja) 1982-01-11 1982-01-11 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58119668A JPS58119668A (ja) 1983-07-16
JPH038582B2 true JPH038582B2 (en]) 1991-02-06

Family

ID=11508991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57001706A Granted JPS58119668A (ja) 1982-01-11 1982-01-11 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58119668A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
JPS63186472A (ja) * 1987-01-28 1988-08-02 Mitsubishi Electric Corp 半導体集積回路装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627965A (en) * 1979-08-15 1981-03-18 Nec Corp Manufacture of semiconductor device
JPH0619250B2 (ja) * 1987-07-24 1994-03-16 鹿島建設株式会社 煙突の壁厚検出方法及び装置

Also Published As

Publication number Publication date
JPS58119668A (ja) 1983-07-16

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